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| Ordering number : ENA0412 2SC6097 2SC6097 Applications * NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features * * * * * Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25C Conditions Ratings 100 100 60 6.5 3 5 600 0.8 15 150 --55 to +150 Unit V V V V A A mA W W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE Conditions VCB=50V, IE=0A VEB=4V, IC=0A VCE=2V, IC=100mA Ratings min typ max 1 1 300 600 Unit A A Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70306 / 53006EA MS IM TB-00002348 No. A0412-1/4 2SC6097 Continued from preceding page. Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol fT Cob VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCE=10V, IC=500mA VCB=10V, f=1MHz IC=1A, IB=50mA IC=1A, IB=100mA IC=1A, IB=100mA IC=10A, IE=0A IC=100A, RBE=0 IC=1mA, RBE= IE=10A, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 100 100 60 6.5 35 680 24 Ratings min typ 390 18 100 90 0.84 150 135 1.2 max Unit MHz pF mV mV V V V V V ns ns ns Package Dimensions unit : mm 7518-003 6.5 5.0 2.3 1.5 Package Dimensions unit : mm 7003-003 6.5 5.0 2.3 1.5 0.5 0.5 4 4 7.0 5.5 5.5 7.0 0.8 1.6 7.5 1 0.5 0.6 2 0.8 1.2 3 0 to 0.2 1.2 0.6 2.5 0.85 0.7 0.85 0.5 1.2 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.3 2.3 Switching Time Test Circuit PW=20s D.C.1% INPUT VR10 IB1 OUTPUT IB2 RB RL 50 + 100F VBE= --5V + 470F VCC=30V 10IB1= --10IB2=IC=0.5A No. A0412-2/4 2SC6097 5.0 4.5 IC -- VCE 100mA 80mA 60mA 40mA 20mA 10mA 3.0 IC -- VBE VCE=2V Collector Current, IC -- A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Collector Current, IC -- A 4.0 2.5 2.0 1.5 C 25C 1.0 5mA 2mA 0.5 IB=0mA 0.8 0.9 1.0 0 0 0.2 0.4 0.6 Ta=7 5 0.8 --25C 1.0 1.2 IT11047 Collector-to-Emitter Voltage, VCE -- V 1000 7 5 IT11046 7 hFE -- IC Ta=75C 25C Base-to-Emitter Voltage, VBE -- V f T -- IC VCE=2V Gain-Bandwidth Product, f T -- MHz VCE=10V 5 3 2 DC Current Gain, hFE 3 --25C 2 100 7 5 100 7 5 0.01 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 7 5 IT11048 5 Cob -- VCB Collector Current, IC -- A IT11049 VCE(sat) -- IC f=1MHz 3 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 2 0.1 7 5 3 2 0.01 7 5 3 3 2 = Ta 75 C --2 C C 5 10 7 5 0.1 25 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 5 3 5 7 100 IT11050 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 VCE(sat) -- IC Collector Current, IC -- A 3 IT11051 VBE(sat) -- IC IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 2 IC / IB=10 0.1 7 5 3 2 1.0 = Ta 7 C 5 --2 5 Ta= --25C 75C C 7 2 0.01 7 5 0.01 5C 25C 5 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 Collector Current, IC -- A IT11052 Collector Current, IC -- A IT11053 No. A0412-3/4 2SC6097 10 7 5 ASO ICP=5A <10s Collector Current, IC -- A 10 10 1.0 7 5 3 2 0.1 7 5 3 2 ms Collector Current, IC -- A 3 2 1m IC=3A DC 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO ICP=5A IC=3A DC operation 100ms 10ms 1ms <10s s 100 s 100 s 50 0 s 50 0 s 0m s op era tio n 0.01 0.1 Ta=25C Single Pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 0.9 0.8 5 7 100 IT11054 0.01 0.1 Tc=25C Single Pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 PC -- Ta Collector-to-Emitter Voltage, VCE -- V 17.5 5 7 100 IT11055 PC -- Tc 15.0 Collector Dissipation, PC -- W 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 Collector Dissipation, PC -- W 12.5 10.0 7.5 5.0 2.5 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT11056 Case Temperature, Tc -- C IT11057 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2006. Specifications and information herein are subject to change without notice. PS No. A0412-4/4 |
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